Features
- High total power dissipation
- High Hfe
- Good linearity
- Low level and low noise transistor
Specification
- Collector-base voltage: -40V
- Collector-emitter voltage: -25V
- Emitter-base voltage: -5V
- Collector current: -500mA
- Collector power dissipation: 625mW
- DC current gain: 64Hfe to 202Hfe
- Transition frequency: 150MHz
- Operating temperature: -55℃ to +150℃
Application
- General purpose switching and amplification application
- Driving loads under 500mA
- General purpose application
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